View DE375-102N10A_336427.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DE375-102N10A
RF Power MOSFET
N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDC PDHS PDAMB RthJC RthJHS Symbol Test Conditions
Tc = 25C Derate 4.4W/C above 25C Tc = 25C
VDSS ID25
Maximum Ratings 1000 1000 20 30 10 60 10 30 5 >200 940 425 4.5 0.16 0.23 Characteristic Values min. typ. V V V V A A A mJ V/ns V/ns W W W C/W C/W
Features TJ = 25C unless otherwise specified
SG1 SG2 GATE
= = = =
1000 V 10 A 1.2 940 W
Test Conditions
TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient Tc = 25C Tc = 25C, pulse width limited by TJM Tc = 25C Tc = 25C IS IDM, di/dt 100A/s, VDD VDSS, Tj 150C, RG = 0.2 IS = 0
RDS(on) PDC
DRAIN
SD1
SD2
max. V 5.5 100 V nA
VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight
VGS = 0 V, ID = 3 ma VDS = VGS, ID = 4 ma VGS = 20 VDC, VDS = 0 VDS = 0.8 VDSS TJ = 25C VGS = 0 TJ = 125C VGS = 15 V, ID = 0.5ID25 Pulse test, t 300S, duty cycle d 2% VDS = 15 V, ID = 0.5ID25, pulse test
1000 2.5
* Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power * * - - * * *
cycling capability IXYS advanced low Qg process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials
50 A 1 mA 1.2 6 -55 150 -55 +150 300 3 18 +150 S C C C C g
Advantages
* Optimized for RF and high speed
switching at frequencies to 50MHz
* Easy to mount--no insulators needed * High power density
1.6mm (0.063 in) from case for 10 s
DE375-102N10A
RF Power MOSFET
Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) min. RG Ciss Coss Crss Cstray Td(on) Ton Td(off) Toff Qg(on) Qgs Qgd Source-Drain Diode Symbol IS ISM VSD Trr QRM IRM
(1) IF = IS, -di/dt = 100A/s, VR = 100V VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 (External) Back Metal to any Pin VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz
typ. 0.3 2900 100 25 33 5 3 5 8 90 30 40
max. pF pF pF pF ns ns ns ns nC nC nC
Characteristic Values (TJ = 25C unless otherwise specified) min. typ. max. 10 80 1.5 200 0.6 7 A A V ns C A
Test Conditions
VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle 2%
These parameters apply to the package, not individual MOSFET devices.
For detailed device mounting and installation instructions, see the "DESeries MOSFET Mounting Instructions" technical note on IXYS RF's web site at www.ixysrf.com/Technical_Support/App_notes.html
IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 5,034,796 5,381,025 4,850,072 5,049,961 5,640,045 4,881,106 5,063,307 4,891,686 5,187,117 4,931,844 5,237,481 5,017,508 5,486,715
DE375-102N10A
RF Power MOSFET
102N10A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff.
Figure 1 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the DEI web site at www.directedenergy.com/spice.htm Net List: .SUBCKT 102N10A 10 20 30 * TERMINALS: D G S * 1000 Volt 10 Amp 1.2 ohm N-Channel Power MOSFET * REV.A 05-23-00 M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 0.5 DON 6 2 D1 ROF 5 7 .1 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 3.0N RD 4 1 1.5 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .5N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=3.8) .MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N) .MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M) .MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M) .ENDS
Doc #9200-0223 Rev 6 (c) 2003 IXYS RF
An
IXYS Company
2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: deiinfo@directedenergy.com Web: http://www.directedenergy.com

▲Up To Search▲

Price & Availability of DE375-102N10A

	To Download DE375-102N10A Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .